Hobson, Theodore D C
ORCID: https://orcid.org/0000-0002-0013-360X, Leighton, Chris
ORCID: https://orcid.org/0000-0003-2492-0816, Das, Bhaskar
ORCID: https://orcid.org/0000-0001-7444-0701 and Zoppi, Guillaume
ORCID: https://orcid.org/0000-0003-3622-6899
(2022)
Data consisting of: Hall effect, hot probe, SIMS and capacitance-voltage methods for paper: P-type conductivity in
Sn-doped Sb2Se3.
[Data Collection]
Description
Hot probe data demonstrating p-type conductivity in Sb2Se3; Hall effect data showing conductivity type, carrier density and carrier mobility in Sb2Se3; Capacitance-voltage data showing carrier density in Sb2Se3; Secondary ion mass spectroscopy data showing Sn incorporation into Sb2Se3.
| Keywords: | Sb2Se3, Carrier Density, Majority Carrier Type, P-type, Carrier Mobility, Sn-doping |
|---|---|
| Divisions: | Faculty of Science and Engineering > School of Physical Sciences > Physics |
| Depositing User: | Theodore Hobson |
| Date Deposited: | 17 Jun 2022 14:45 |
| Last Modified: | 14 Sep 2022 12:20 |
| DOI: | 10.17638/datacat.liverpool.ac.uk/1702 |
| URI: | https://datacat.liverpool.ac.uk/id/eprint/1702 |
Available Files
Data
Creative Commons: Attribution 4.0 |
Creative Commons: Attribution 4.0 |
Creative Commons: Attribution 4.0 |
Creative Commons: Attribution 4.0 |
Creative Commons: Attribution 4.0 |