Data consisting of: Hall effect, hot probe, SIMS and capacitance-voltage methods for paper: P-type conductivity in Sn-doped Sb2Se3

Hobson, Theodore D C ORCID: https://orcid.org/0000-0002-0013-360X, Leighton, Chris ORCID: https://orcid.org/0000-0003-2492-0816, Das, Bhaskar ORCID: https://orcid.org/0000-0001-7444-0701 and Zoppi, Guillaume ORCID: https://orcid.org/0000-0003-3622-6899 (2022) Data consisting of: Hall effect, hot probe, SIMS and capacitance-voltage methods for paper: P-type conductivity in Sn-doped Sb2Se3. [Data Collection]

Description

Hot probe data demonstrating p-type conductivity in Sb2Se3; Hall effect data showing conductivity type, carrier density and carrier mobility in Sb2Se3; Capacitance-voltage data showing carrier density in Sb2Se3; Secondary ion mass spectroscopy data showing Sn incorporation into Sb2Se3.

Keywords: Sb2Se3, Carrier Density, Majority Carrier Type, P-type, Carrier Mobility, Sn-doping
Divisions: Faculty of Science and Engineering > School of Physical Sciences > Physics
Depositing User: Theodore Hobson
Date Deposited: 17 Jun 2022 14:45
Last Modified: 14 Sep 2022 12:20
DOI: 10.17638/datacat.liverpool.ac.uk/1702
URI: https://datacat.liverpool.ac.uk/id/eprint/1702

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Creative Commons: Attribution 4.0
Creative Commons: Attribution 4.0
Creative Commons: Attribution 4.0

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