ReadMe: UoL Repository item #1702, data linked to journal publication.
Title: 'Data consisting of: Hall effect, hot probe, SIMS and capacitance-voltage methods for paper:
P-type conductivity in Sn-doped Sb2Se3'

These data are reported in the journal article 'P-type conductivity in Sn-doped Sb2Se3'.
These data were deposited by one of the lead authors, T D C Hobson, on 2022-05-18.
The investigators responsible for generating the data contained in the record are the following:
T D C Hobson, C Leighton, B Das and G Zoppi. More authors are responsible for the publication itself,
however, including co-lead author H Shiel.

At the time of writing (2022-05-24), the article had been submitted to the journal: Journal of Physics: Energy.
The article provides the most useful context for the data and discusses their interpretation.

These data were generated between the years 2018 and 2021 at the University of Liverpool, the University
of Minnesota, and Northumbria University.

All datafiles contain a small number of datasets with descriptive labels matching those used in the article.
As such they ought to be easily navigable, especially for those familiar with the article.
The files are accessible with the application 'Originlab'.

The datafile: 'P-type Hot Probe for Repository.opju' contains data gathered using the 'hot-probe' method
on several samples of doped and undoped antimony selenide (Sb2Se3) single crystals.

The datafile: 'P-type C-V for Repository.opju' contains data gathered using the capacitance-voltage profiling
technique on a sample of Sn-doped Sb2Se3 single crystal.

The datafile: 'P-type Hall for Respository.opju' contains data gathered using the Hall effect
technique on samples of doped Sb2Se3 single crystals.

The datafile: 'P-type SIMS for Repository.opju' contains data gathered using the secondary ion mass spectrometry
technique on samples of doped and undoped Sb2Se3 single crystals.

The experimental details by which the included data were generated, which can also be found in the article,
are as follows:

Data generated by T D C Hobson:

Sections of Sb2Se3 bulk crystal were manually cleaved to produce a flat, clean surface
for characterisation. Previous studies have identified this as the (010) crystal plane.

For hot-probe measurements, two lateral 100 nm thick Au contacts were deposited
via thermal evaporation onto the (010) plane with areas varying from 0.03 - 0.1 cm2
depending on the size and shape of the crystals.
Hot-probe measurements were carried out using a Keithley 2400 source meter with Au wire probes. A
heat source was applied to one probe during measurement, with its temperature mon-
itored by a K-type thermocouple. After the principal measurement, the sample was
allowed to cool and the heat source was applied to the opposite probe (without tem-
perature monitoring) to confirm that an opposite current flowed and that currents were
thermally-induced.
Immediately prior to measurement of Sb2Se3, n-InSb and p-CdTe reference samples were measured with the hot-probe, in order to assign a current po-
larity for each conductivity type given the probe setup. The same probe configuration
was then used for the Sb2Se3 crystals.

For capacitance-voltage (C − V ) measurements, one In and one Au contact, both
thermally evaporated at a thickness of 100 nm, were used, with the In contact intended
to act as Schottky barrier and the Au as an Ohmic contact (assuming p-type crystals).
C − V measurements were carried out with a Solartron 1260 Frequency Response Anal-
yser and 1296 Dielectric Interface at a range of AC frequencies from 7.1 kHz - 12.6 kHz,
with DC bias from -1 to +1 V at room temperature in the dark.

Data generated by C Leighton and B Das:

Hall effect measurements were carried out in the van der Pauw geometry using
sputtered 100-nm-thick Au contacts. Measurements were made using a Keithley 2400
source meter and a Quantum Design Physical Property Measurement System (PPMS).
Applied magnetic field strengths of up to 90 kOe (equivalent to 9 T) were used and all
measurements were taken at 300 K. All the typical inversions of excitation current and
magnetic field were employed, and a zero-field background was subtracted.

Data generated by G Zoppi:

Qualitative secondary ion mass spectroscopy (SIMS) measurements were
carried out on the (010) surface using a Hiden Analytical gas ion gun and quadrupole
detector. O− ions were used at 5 keV beam energy and 300 nA current, with a scan
area of approximately 0.5 × 0.5 mm2. A data gating area of 10% was used to remove
side-wall effects.