Correlated metal LaNiO3 as a p-type transparent conductor

Shivang, shivang, Poole, Emmeline, Plowman, jacob, Manning, Troy D, Alaria, Jonathan, Partida Manzanera, teresa, Sanderson, Kevin and Rosseinsky, Matthew (2026) Correlated metal LaNiO3 as a p-type transparent conductor. [Data Collection]

Data Catalogue DOI: 10.17638/datacat.liverpool.ac.uk/3098

Description

Transparent Conducting Oxides (TCOs) are essential as electrodes in a broad range of optoelectronic applications. A range of n-type TCOs meeting application requirements for transparency and conductivity have been developed, whereas efficient and stable p-type TCOs have so far remained a challenge, limiting the opportunities to explore novel architectures for transparent electronic devices. In particular, a high-performance p-type transparent electrode would enable the use of n-type absorber layers in superstrate solar cells. Recently, correlated metals featuring strong interelectron repulsion have enabled enhanced transparency in highly conducting n-type systems leading to figures of merit comparable with those of conventional degenerate semiconductors such as ITO. Here we demonstrate that the p-type correlated metal LaNiO3 is a robust and scalable p-type transparent conductor with excellent performance compared to existing materials. We achieve a Haacke Figure of Merit double that of the highest performing p-type co-doped semiconductor at a thickness an order of magnitude lower, with a minimal sheet resistance of 1070 Ω/☐ and transmittance of >85%. The films are air stable and show a thickness-tuneable balance of sheet resistance and transparency which is critical for targeted applications.

Keywords:

p-type transparent conductors, Pulsed Laser Deposition, Thin Films, X-ray diffraction, Electrical properties, optical properties

Date Deposited:

22 Jul 2026 09:36

Last Modified:

22 Jul 2026 09:38

DOI:

10.17638/datacat.liverpool.ac.uk/3098

URI:

https://datacat.liverpool.ac.uk/id/eprint/3098