Potter, Richard, Chalker, Paul, Partida Manzanera, Teresa and Roberts, Joseph (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. [Data Collection]
Potter, Richard, Partida, Teresa and Roberts, Joseph (2015) Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1x dielectrics for GaN/AlxGa1xN/GaN high electron mobility.transistors applications . [Data Collection]
Chalker, Paul and Roberts, Joseph (2015) APL F-doped alumina manuscript. [Data Collection]