APL F-doped alumina manuscript

Chalker, Paul and Roberts, Joseph (2015) APL F-doped alumina manuscript. [Data Collection]

Description

Control of threshold voltage in E-mode and D-mode GaN-on-Si Metal-Insulator-Semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Keywords:	ALD, Power electronics, GaN, MISFET
Divisions:	Faculty of Science and Engineering > School of Engineering
Depositing User:	Paul Chalker
Date Deposited:	22 Feb 2016 09:21
Last Modified:	22 Feb 2016 09:21
DOI:	10.17638/datacat.liverpool.ac.uk/60
URI:	https://datacat.liverpool.ac.uk/id/eprint/60
Additional details Additional details Creators: Chalker, Paul Roberts, Joseph Research funder: Grant Number Name of the Funder The Funder's ID EP/K014471/1 Engineering and Physical Sciences Research Council EPSRC Date: 18 September 2015 Statement on legal, ethical and access issues : Creative Commons Licence Resource language: English Project Details: Project ID The title of the Project Project Funding ID Project Start Date Project End Date 98859 Silicon Compatible GaN Power electronics 98861 1 January 2013 31 December 2017 Publisher: University of Liverpool Contact email address: pchalker@liv.ac.uk Last Modified: 22 Feb 2016 09:21

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