Shaw, Andrew, Jin, Jidong, Mitrovic, Ivona, Hall, Steve, Wrench, Jacqueline and Chalker, Paul (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C - V measurements. [Data Collection]
Description
The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail and deep states. The parameters for the tail and deep states are Ntail = 1.6 × 10¹⁹ cm− 3, Ttail = 540 K, Ndeep = 6.5 × 10¹⁶ cm− 3 and Tdeep = 4058 K respectively. Furthermore, the DOS from C-V provides a good fit with current-voltage characteristics, using the multiple trap and release model.
| Keywords: | Density of states, DOS, Nb doped ZnO, NbZnO |
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| Divisions: | Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science |
| Depositing User: | Andrew Shaw |
| Date Deposited: | 17 Jul 2017 10:38 |
| Last Modified: | 17 Jul 2017 10:38 |
| DOI: | 10.17638/datacat.liverpool.ac.uk/373 |
| URI: | https://datacat.liverpool.ac.uk/id/eprint/373 |
Available Files
Data
Data: Open Data Commons Attribution License (Attribution) |
