Sawangsri et al., Microelectronic Engineering, volume 178, pages 178-181 (2017)

Mitrovic, Ivona Z. (2017) Sawangsri et al., Microelectronic Engineering, volume 178, pages 178-181 (2017). [Data Collection]

Data Catalogue DOI: 10.17638/datacat.liverpool.ac.uk/372

Original publication URL: http://dx.doi.org/10.1016/j.mee.2017.04.010

Description

The band alignment of Ta2O5/GaN has been measured experimentally. The HCl cleaning has been found to be effective in removing oxygen from the GaN surface and was used prior to deposition of the Ta2O5 films by radio frequency magnetron sputtering. Variable angle spectroscopic ellipsometry was performed to measure the thickness, optical constants and band gap of GaN and Ta2O5/GaN samples. The valence band offset of Ta2O5/GaN was measured by X-ray photoelectron spectroscopy using Kraut’s method, and found to be 0.70 ± 0.25 eV. The results provide experimental evidence of an earlier theoretical study of higher effective barrier for holes than for electrons in the Ta2O5/GaN material system.

Keywords:

GaN, Ta2O5, band alignment

Divisions:

Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science

Depositing User:

Ivona Mitrovic

Date Deposited:

27 Jun 2017 11:33

Last Modified:

27 Jun 2017 11:33

DOI:

10.17638/datacat.liverpool.ac.uk/372