The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver

Potter, Richard, Golrokhi, Zahra, Marshall, Paul, Romani, Simon, Rushworth, Simon and Chalker, Paul (2016) The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. [Data Collection]

Data Catalogue DOI: 10.17638/datacat.liverpool.ac.uk/221

Description

Ultra-thin conformal silver films are the focus of development for applications such as anti-microbial surfaces, optical components and electronic devices. In this study, metallic silver films have been deposited using direct liquid injection thermal atomic layer deposition (ALD) using (hfac)Ag(1,5-COD) ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) as the metal source and tertiary butyl hydrazine (TBH) as a co-reactant. The process provides a 23 °C wide ‘self-limiting’ ALD temperature window between 105 and 128 °C, which is significantly wider than is achievable using alcohol as a co-reactant. A mass deposition rate of ~20 ng/cm2/cycle (~0.18 Å/cycle) is observed under self-limiting growth conditions. The resulting films are crystalline metallic silver with a near planar film-like morphology which are electrically conductive. By extending the temperature range of the ALD window by the use of TBH as a co-reactant, it is envisaged that the process will be exploitable in a range of new low temperature applications.

Keywords:

Atomic layer deposition, self limiting, silver thin films, tertiary butyl hydrazine

Divisions:

Faculty of Science and Engineering > School of Engineering

Depositing User:

Richard Potter

Date Deposited:

24 Nov 2016 10:13

Last Modified:

03 May 2017 13:37

DOI:

10.17638/datacat.liverpool.ac.uk/221