Band alignment of Ta2O5 on sulphur passivated germanium by X-ray photoelectron spectroscopy (IEEE PRIME 2015)

Mitrovic, Ivona Z. (2016) Band alignment of Ta2O5 on sulphur passivated germanium by X-ray photoelectron spectroscopy (IEEE PRIME 2015). [Data Collection]

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In this work Ta2O5 films were deposited on germanium, by atomic layer deposition (ALD) at 250°C with and without sulphur passivation. X-ray photoelectron spectroscopy (XPS) was carried out to investigate the band line-up of Ta2O5 films with respect to germanium. The results show that the valance band offsets of Ta2O5 with respect to sulphur-passivated and unpassivated germanium are 2.67 eV and 2.84 respectively. The band gap value of 20 nm thick Ta2O5 films was determined to be 4.44 eV from the electron energy loss spectrum of O 1s core level.

Additional information: IEEE PRIME 2015, 29 June - 2 July 2015, University of Glasgow, UK, pp. 161-163, DOI: 10.1109/PRIME.2015.7251359.
Keywords: tantalum oxide, valence band offset, X-ray photoelectron spectroscopy
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Ivona Mitrovic
Date Deposited: 01 Sep 2016 08:39
Last Modified: 01 Sep 2016 08:39
URI: http://datacat.liverpool.ac.uk/id/eprint/183

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