Mitrovic, Ivona Z. (2016) Conduction mechanisms in Al-Ta2O5-Al2O3-Al rectifiers (IEEE PRIME 2015). [Data Collection]
Data Catalogue DOI: 10.17638/datacat.liverpool.ac.uk/168
Description
This paper investigates the dominant conduction mechanisms in two bi-layer Ta2O5-Al2O3 structures fabricated by atomic layer deposition and rf sputtering. In depth experimental (electrical and optical) and theoretical analysis have been conducted to demonstrate the dominancy of quantum mechanical tunnelling, a desirable conduction mechanism for high-speed nanorectifier device operation.
| Keywords: | Metal-insulator-insulator-metal, conduction mechanisms, Schottky emission, Direct tunnelling, Fowler-Nordheim tunnelling, Spectroscopic ellipsometry |
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| Divisions: | Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science |
| Depositing User: | Ivona Mitrovic |
| Date Deposited: | 26 Jul 2016 08:30 |
| Last Modified: | 26 Jul 2016 08:30 |
| DOI: | 10.17638/datacat.liverpool.ac.uk/168 |
| URI: | https://datacat.liverpool.ac.uk/id/eprint/168 |
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