FIG. 3: ns as a function of the VGS obtained from C-V measurements at 10 kHz for the ~ 100×160 µm2 area Schottky gate HEMT and MOS-HEMT structures fabricated with ~ 10 nm thick Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate oxides,,,
"Gate-Source bias, VGS (V)","2DEG concentration, ns (cm-2)",,
,Schottky HEMT, Al2O3 MOSHEMT,(Ta2O5)0.12(Al2O3)0.88 MOSHEMT
-6,0,0,0
-5.8,1.41E+09,1.37E+09,1.60E+09
-5.6,2.82E+09,2.72E+09,3.23E+09
-5.4,4.21E+09,4.10E+09,4.82E+09
-5.2,5.64E+09,5.44E+09,6.40E+09
-5,7.07E+09,6.79E+09,7.99E+09
-4.8,8.48E+09,8.20E+09,9.59E+09
-4.6,9.92E+09,9.60E+09,1.12E+10
-4.4,1.14E+10,1.10E+10,1.29E+10
-4.2,1.28E+10,1.24E+10,1.46E+10
-4,1.43E+10,1.39E+10,1.62E+10
-3.8,1.57E+10,1.54E+10,1.83E+10
-3.6,1.72E+10,1.76E+10,2.28E+10
-3.4,1.87E+10,2.41E+10,7.34E+10
-3.2,2.02E+10,9.20E+10,2.64E+11
-3,2.17E+10,3.03E+11,5.47E+11
-2.8,2.32E+10,5.84E+11,8.62E+11
-2.6,2.47E+10,8.86E+11,1.19E+12
-2.4,2.63E+10,1.20E+12,1.52E+12
-2.2,2.78E+10,1.51E+12,1.86E+12
-2,2.93E+10,1.83E+12,2.20E+12
-1.8,3.10E+10,2.15E+12,2.54E+12
-1.6,3.38E+10,2.47E+12,2.89E+12
-1.4,4.43E+10,2.79E+12,3.23E+12
-1.2,1.14E+11,3.11E+12,3.58E+12
-1,4.62E+11,3.44E+12,3.92E+12
-0.8,9.42E+11,3.76E+12,4.27E+12
-0.6,1.45E+12,4.09E+12,4.62E+12
-0.4,1.98E+12,4.41E+12,4.96E+12
-0.2,2.51E+12,4.74E+12,5.31E+12
3.05E-15,3.05E+12,5.07E+12,5.66E+12
0.2,3.59E+12,5.39E+12,6.01E+12
0.4,4.15E+12,5.72E+12,6.36E+12
0.6,4.81E+12,6.05E+12,6.71E+12
0.8,5.81E+12,6.38E+12,7.06E+12
1,7.31E+12,6.72E+12,7.42E+12
1.2,9.07E+12,7.06E+12,7.77E+12
1.4,1.10E+13,7.42E+12,8.13E+12
1.6,1.33E+13,7.79E+12,8.49E+12
1.8,1.58E+13,8.16E+12,8.85E+12
2,1.84E+13,8.55E+12,9.22E+12