FIG. 2. C-V measurements at 10 kHz for  100x160 µm2 area Schottky gate HEMT and MOS-HEMT structures fabricated with 10 nm thick Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate oxides,,,
"Gate-Source bias, VGS (V)","Gate-source capacitance, CGS (F/m2)",,
,Schottky HEMT, Al2O3 MOSHEMT,(Ta2O5)0.12(Al2O3)0.88 MOSHEMT
-6, (Ta2O5)0.12(Al2O3)0.88 MOSHEMT,1.10E-05,1.26E-05
-5.8,1.14E-05,1.09E-05,1.30E-05
-5.6,1.11E-05,1.08E-05,1.31E-05
-5.4,1.12E-05,1.12E-05,1.24E-05
-5.2,1.16E-05,1.04E-05,1.28E-05
-5,1.14E-05,1.12E-05,1.26E-05
-4.8,1.12E-05,1.14E-05,1.30E-05
-4.6,1.18E-05,1.10E-05,1.30E-05
-4.4,1.15E-05,1.14E-05,1.39E-05
-4.2,1.15E-05,1.15E-05,1.29E-05
-4,1.16E-05,1.15E-05,1.40E-05
-3.8,1.19E-05,1.28E-05,1.96E-05
-3.6,1.24E-05,2.81E-05,2.43E-04
-3.4,1.17E-05,3.38E-04,0.0012
-3.2,1.19E-05,0.00139,0.00209
-3,1.20E-05,0.00215,0.00246
-2.8,1.16E-05,0.00237,0.00259
-2.6,1.25E-05,0.00246,0.00265
-2.4,1.26E-05,0.0025,0.00268
-2.2,1.20E-05,0.00253,0.00271
-2,1.25E-05,0.00255,0.00273
-1.8,1.43E-05,0.00256,0.00274
-1.6,4.85E-05,0.00257,0.00275
-1.4,3.20E-04,0.00258,0.00276
-1.2,0.00224,0.00259,0.00277
-1,0.00367,0.00259,0.00278
-0.8,0.00402,0.0026,0.00278
-0.6,0.00416,0.0026,0.00278
-0.4,0.00424,0.00261,0.00279
-0.2,0.00429,0.00261,0.00279
0,0.00433,0.00262,0.00279
0.2,0.00436,0.00262,0.00279
0.4,0.00455,0.00263,0.0028
0.6,0.00631,0.00264,0.00281
0.8,0.01078,0.00267,0.00282
1,0.01355,0.00272,0.00284
1.2,0.0147,0.0028,0.00286
1.4,0.01668,0.00288,0.00288
1.6,0.01931,0.00296,0.00289
1.8,0.02114,0.00305,0.00291
2,0.0209,0.00316,0.00292