Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

921 14 1809 2 12039 document 1809 README.txt text/plain 08567c4f241799e1e0ac9175703cb7d5 MD5 894 2019-07-25 15:48:22 https://datacat.liverpool.ac.uk/921/1/README.txt 921 1 1 text/plain text en public cc_by

README.txt

readme 1810 2 12043 document 1810 FIG. 2. C-V measurements.csv text/plain 57c33aa0362f5e1b057c8a0a843c1507 MD5 1579 2019-07-25 15:48:32 https://datacat.liverpool.ac.uk/921/2/FIG.%202.%20C-V%20measurements.csv 921 2 2 text/plain text en public cc_by

FIG. 2. C-V measurements.csv

readme 1811 2 12046 document 1811 FIG. 3. ns as a function of the VGS obtained from C-V measurements .csv text/plain c2c2158d40e394823f21615c749f1e0a MD5 1671 2019-07-25 15:48:36 https://datacat.liverpool.ac.uk/921/3/FIG.%203.%20ns%20as%20a%20function%20of%20the%20VGS%20obtained%20from%20C-V%20measurements%20.csv 921 3 3 text/plain text en public cc_by

FIG. 3. ns as a function of the VGS obtained from C-V measurements .csv

readme 1812 2 12049 document 1812 FIG. 4. Output I-V characteristics.csv text/plain 99c0cdfd2e4eccd2c2c2ed43d2dc97eb MD5 6078 2019-07-25 15:48:45 https://datacat.liverpool.ac.uk/921/4/FIG.%204.%20Output%20I-V%20characteristics.csv 921 4 4 text/plain text en public cc_by

FIG. 4. Output I-V characteristics.csv

readme 1813 2 12052 document 1813 FIG. 5(a) Output ID and gm .csv text/plain 2213f72987f269228221e9f38a74b206 MD5 5859 2019-07-25 15:48:57 https://datacat.liverpool.ac.uk/921/5/FIG.%205%28a%29%20Output%20ID%20and%20gm%20.csv 921 5 5 text/plain text en public cc_by

FIG. 5(a) Output ID and gm .csv

readme 1814 2 12055 document 1814 FIG. 5(b) Output ID and IG.csv text/plain 0f3881944ec899c7265fafc89e57636b MD5 6287 2019-07-25 15:49:01 https://datacat.liverpool.ac.uk/921/6/FIG.%205%28b%29%20Output%20ID%20and%20IG.csv 921 6 6 text/plain text en public cc_by

FIG. 5(b) Output ID and IG.csv

readme 1815 2 12058 document 1815 FIG. 6. Three-terminal OFF-state measurements.csv text/plain d06c420ad7e1a5f81200b6603d9c7c09 MD5 28022 2019-07-25 15:49:04 https://datacat.liverpool.ac.uk/921/7/FIG.%206.%20Three-terminal%20OFF-state%20measurements.csv 921 7 7 text/plain text en public cc_by

FIG. 6. Three-terminal OFF-state measurements.csv

readme 1816 1 12065 document 1816 indexcodes.txt text/x-c 080e96e008f6b40e35d9363ad925e7cf MD5 550 2019-07-25 16:07:03 https://datacat.liverpool.ac.uk/921/8/indexcodes.txt 921 8 8 text/x-c other Generate index codes conversion from text to indexcodes en public

indexcodes.txt

http://eprints.org/relation/isVersionOf https://datacat.liverpool.ac.uk/id/document/1809 http://eprints.org/relation/isVolatileVersionOf https://datacat.liverpool.ac.uk/id/document/1809 http://eprints.org/relation/isIndexCodesVersionOf https://datacat.liverpool.ac.uk/id/document/1809 archive 11522 staging/00/00/09/21 2019-07-26 11:28:19 2019-07-26 11:28:19 2019-07-26 11:28:19 data_collection show Potter Richard 377479 Chalker Paul 303932 Partida Manzanera Teresa 200756915 Roberts Joseph 435213 Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors sch_eng GaN-HEMT, atomic-layer-deposition, ALD, gate-dielectric The current research investigates the potential advantages of replacing Al2O3 with (Ta2O5)0.12(Al2O3)0.88 as a higher dielectric constant (κ) gate dielectric for GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The electrical characteristics of GaN-capped AlGaN/GaN MOS-HEMT devices with (Ta2O5)0.12(Al2O3)0.88 as the gate dielectric are compared to devices with Al2O3 gate dielectric and devices without any gate dielectric (Schottky HEMTs). Compared to the Al2O3 MOS-HEMT, the (Ta2O5)0.12(Al2O3)0.88 MOS-HEMT achieves a larger capacitance and a smaller absolute threshold voltage, together with a higher two-dimensional electron gas carrier concentration. This results in a superior improvement of the output characteristics with respect to the Schottky HEMT, with higher maximum and saturation drain current values observed from DC current-voltage measurements. Gate transfer measurements also show a higher transconductance for the (Ta2O5)0.12(Al2O3)0.88 MOS-HEMT. Furthermore, from OFF-state measurements, the (Ta2O5)0.12(Al2O3)0.88 MOS-HEMT shows a larger reduction of the gate leakage current in comparison to the Al2O3 MOS-HEMT. These results demonstrate that the increase in κ of (Ta2O5)0.12(Al2O3)0.88 compared with Al2O3 leads to enhanced device performance when the ternary phase is used as a gate dielectric in the GaN-based MOS-HEMT. 2019-07-25 University of Liverpool 10.17638/datacat.liverpool.ac.uk/921 https://doi.org/10.1063/1.5049220 EP/K014471/1 EPSRC Z. H. Zaidi, Department of Electronic and Electrical Engineering, University of Sheffield S. B. Dolmanan, Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore K. B. Lee, Department of Electronic and Electrical Engineering, University of Sheffield P. A. Houston, Department of Electronic and Electrical Engineering, University of Sheffield S. Tripathy, Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore English