Band alignment of Ta2O5 on sulphur passivated germanium by X-ray photoelectron spectroscopy (IEEE PRIME 2015)

183 8 392 3 1498 document 392 IEEE PRIME 2015 Althobaiti et al-data.zip application/zip 8ca8316c07896639d09bc874dfec196c MD5 689667 2016-08-31 18:25:27 https://datacat.liverpool.ac.uk/183/1/IEEE%20PRIME%202015%20Althobaiti%20et%20al-data.zip 183 1 1 application/zip archive en public cc_by_4

IEEE PRIME 2015 Althobaiti et al-data.zip

full_archive 393 2 1500 document 393 Readme.docx application/vnd.openxmlformats-officedocument.wordprocessingml.document 9e3751ffebbfb0690f282f76b7c30d9c MD5 13238 2016-08-31 18:25:38 https://datacat.liverpool.ac.uk/183/2/Readme.docx 183 2 2 application/vnd.openxmlformats-officedocument.wordprocessingml.document text en public cc_by_4

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readme 394 1 1505 document 394 indexcodes.txt text/plain 7e7de618a815827bcb72404581ed0792 MD5 293 2016-08-31 18:54:47 https://datacat.liverpool.ac.uk/183/3/indexcodes.txt 183 3 3 text/plain other Generate index codes conversion from text to indexcodes en public

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http://eprints.org/relation/isVersionOf https://datacat.liverpool.ac.uk/id/document/393 http://eprints.org/relation/isVolatileVersionOf https://datacat.liverpool.ac.uk/id/document/393 http://eprints.org/relation/isIndexCodesVersionOf https://datacat.liverpool.ac.uk/id/document/393 archive 12649 staging/00/00/01/83 2016-09-01 08:39:38 2016-09-01 08:39:50 2016-09-01 08:39:38 data_collection show Mitrovic Ivona Z. 365539 Band alignment of Ta2O5 on sulphur passivated germanium by X-ray photoelectron spectroscopy (IEEE PRIME 2015) sch_eee tantalum oxide, valence band offset, X-ray photoelectron spectroscopy IEEE PRIME 2015, 29 June - 2 July 2015, University of Glasgow, UK, pp. 161-163, DOI: 10.1109/PRIME.2015.7251359. In this work Ta2O5 films were deposited on germanium, by atomic layer deposition (ALD) at 250°C with and without sulphur passivation. X-ray photoelectron spectroscopy (XPS) was carried out to investigate the band line-up of Ta2O5 films with respect to germanium. The results show that the valance band offsets of Ta2O5 with respect to sulphur-passivated and unpassivated germanium are 2.67 eV and 2.84 respectively. The band gap value of 20 nm thick Ta2O5 films was determined to be 4.44 eV from the electron energy loss spectrum of O 1s core level. 2016-08-31 University of Liverpool 10.17638/datacat.liverpool.ac.uk/183 EP/I012907/1 ENGINEERING & PHYSICAL SCIENCES RESEARCH COUNCIL 172 79399 High permittivity dielectrics on Ge for end of Roadmap application. 86753 2011-01-03 2014-03-31 English