Anion compositional diversity reduces bonding dimensionality in the van der Waals semiconductor Bi4O4SeCl2

Gibson, Quinn, Manning, Troy, Zanella, Marco, Zhao, Tianqui, Murgatroyd, Philip, Robertson, Craig, Jones, Leanne, McBride, Fiona, Raval, Rasmita, Cora, Furio, Slater, Ben, Claridge, John, Dhanak, Vin, Dyer, Matthew, Alaria, Jonathan and Rosseinsky, Matthew (2019) Anion compositional diversity reduces bonding dimensionality in the van der Waals semiconductor Bi4O4SeCl2. [Data Collection]

Description

Making new van der Waals materials with electronic or magnetic functionality is a chemical design challenge for the development of two-dimensional nanoelectronic and energy conversion devices. We present the synthesis and properties of the van der Waals material Bi4O4SeCl2, which is a 1:1 superlattice of the van der Waals insulator BiOCl and the three-dimensionally bonded layered high mobility semiconductor Bi2O2Se. The presence of three anions gives the new structure both the bridging selenide anion sites that connect pairs of Bi2O2 layers in Bi2O2Se and the terminal chloride sites that produce the van der Waals gap in BiOCl. This retains the electronic properties of Bi2O2Se, while reducing the dimensionality of the bonding network connecting the Bi2O2Se units to allow exfoliation of Bi4O4SeCl2 to 1.4 nm height. The superlattice structure is stabilised by the configurational entropy of anion disorder across the terminal and bridging sites. The reduction in bonding dimensionality with retention of electronic functionality stems from the expanded anion compositional diversity.

Keywords: van der Waals materials, 2D materials, multiple anion materials, X-ray diffraction, Raman, X-ray photoelectron spectroscopy
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Troy Manning
Date Deposited: 28 Jan 2020 11:39
Last Modified: 28 Jan 2020 11:39
DOI: 10.17638/datacat.liverpool.ac.uk/901
URI: https://datacat.liverpool.ac.uk/id/eprint/901

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